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S504T/S504TR/S504TRW
Vishay Semiconductors
MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
AGC C block RF in RG1
13650
C block G2 G1 S D
RFC VDD(VDS) RF out C block
VGG (VRG1)
Features
D Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D High AGC-range D Integrated gate protection diodes
D D D D
Low noise figure High gain Improved cross modulation at gain reduction SMD package
2
1
1
2
3
4
13628
4
3
13629
S504T Marking: 504 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S504TR Marking: 54R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
4
3
13633
S504TRW Marking: W04 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85043 Rev. 5, 05-Jun-01
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S504T/S504TR/S504TRW
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 8 ID 25 IG1/G2SM 10 VG1/G2SM 6 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA V mW C C
Tamb 60 C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage ID = 10
mA,
Test Conditions VG1S = VG2S = 0
Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS +IG1SS IG2SS IDSO VG1S(OFF)
Min 15 7 7
Typ
Max Unit V 10 10 20 20 V V nA nA mA V V
IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 220 kW VDS = 5 V, VG2S = 4 V, ID = 20
7 0.4
10
14 1.2
mA mA
VDS = VRG1 = 5 V, RG1 = 220 kW, ID = 20
VG2S(OFF)
1.0
Remark on driving the MOSMIC and improving intermodulation behavior:
By setting RG1 = 150 kW typical value of IDSO will raise up to 15 mA and improved intermodulation behavior will be performed.
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Document Number 85043 Rev. 5, 05-Jun-01
S504T/S504TR/S504TRW
Vishay Semiconductors Electrical AC Characteristics
VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol Min y21s 20 Cissg1 Crss Coss Gps Gps 16.5 DGps 40 F F Typ 24 2.1 20 0.9 26 20 1 1.3 Max Unit 28 mS 2.5 pF fF pF dB dB dB dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Dimensions of S504T in mm
96 12240
Document Number 85043 Rev. 5, 05-Jun-01
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S504T/S504TR/S504TRW
Vishay Semiconductors Dimensions of S504TR in mm
96 12239
Dimensions of S504TRW in mm
96 12238
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Document Number 85043 Rev. 5, 05-Jun-01
S504T/S504TR/S504TRW
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85043 Rev. 5, 05-Jun-01
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